参数资料
型号: S29PL-J60BAW012
厂商: Spansion Inc.
元件分类: DRAM
英文描述: CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述: CMOS 3V电压供电,同步读/写Flash存储器并有增强VersatileIO控制
文件页数: 64/96页
文件大?。?/td> 827K
代理商: S29PL-J60BAW012
62
S29PL-J
S29PL-J_00_A9 September 22, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Legend
BA = Address of bank switching to autoselect mode, bypass mode, or erase operation. Determined by PL127J: Amax:A20, PL064J and
PL129J: Amax:A19, PL032J: Amax:A18.
PA = Program Address (Amax:A0). Addresses latch on falling edge of WE# or CE# (CE1#/CE2# for PL129J) pulse, whichever happens later.
PD = Program Data (DQ15:DQ0) written to location PA. Data latches on rising edge of WE# or CE# (CE1#/CE2# for PL129J) pulse,
whichever happens first.
RA = Read Address (Amax:A0).
RD = Read Data (DQ15:DQ0) from location RA.
SA = Sector Address (Amax:A12) for verifying (in autoselect mode) or erasing.
WD = Write Data. See “Configuration Register” definition for specific write data. Data latched on rising edge of WE#.
X = Don’t care
Notes
1. See
Table 10.1 on page 20
for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells in table denote read cycles. All other cycles are write operations.
4. During unlock and command cycles, when lower address bits are 555 or 2AAh as shown in table, address bits higher than A11 (except
where BA is required) and data bits higher than DQ7 are don’t cares.
5. No unlock or command cycles required when bank is reading array data.
6. The Reset command is required to return to reading array (or to erase-suspend-read mode if previously in Erase Suspend) when bank is
in autoselect mode, or if DQ5 goes high (while bank is providing status information).
7. Fourth cycle of autoselect command sequence is a read cycle. System must provide bank address to obtain manufacturer ID or device ID
information. See
Autoselect Command Sequence on page 56
for more information.
8. The data is DQ6=1 for factory and customer locked and DQ7=1 for factory locked.
9. The data is 00h for an unprotected sector group and 01h for a protected sector group.
10.Device ID must be read across cycles 4, 5, and 6. PL127J (X0Eh = 2220h, X0Fh = 2200h), PL129J (X0Eh = 2221h, X0Fh =
2200h),PL064J (X0Eh = 2202h, X0Fh = 2201h), PL032J (X0Eh = 220Ah, X0Fh = 2201h).
11.System may read and program in non-erasing sectors, or enter autoselect mode, when in Program/Erase Suspend mode. Program/
Erase Suspend command is valid only during a sector erase operation, and requires bank address.
12.Program/Erase Resume command is valid only during Erase Suspend mode, and requires bank address.
13.Command is valid when device is ready to read array data or when device is in autoselect mode.
14.WP#/ACC must be at V
ID
during the entire operation of command.
15.Unlock Bypass Entry command is required prior to any Unlock Bypass operation. Unlock Bypass Reset command is required to return to
the reading array.
Table 15.1
Memory Array Command Definitions
Command (Notes)
Bus Cycles (Notes
1
4
)
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read
(5)
1
RA
RD
Reset
(6)
1
XXX
F0
A
(
Manufacturer ID
4
555
AA
2AA
55
(BA)
555
90
(BA)
X00
01
Device ID
(10)
6
555
AA
2AA
55
(BA)
555
90
(BA)
X01
227E
(BA)
X0E
(10)
(BA)
X0F
(10)
Secured Silicon Sector
Factory Protect
(8)
4
555
AA
2AA
55
(BA)
555
90
X03
(8)
Sector Group
Protect Verify
(9)
4
555
AAA
2AA
55
(BA)
555
90
(SA) X02
XX00/
XX01
Program
4
555
AA
2AA
55
555
A0
PA
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend
(11)
1
BA
B0
Program/Erase Resume
(12)
1
BA
30
CFI Query
(13)
1
55
98
Accelerated Program
(15)
2
XX
A0
PA
PD
Unlock Bypass Entry
(15)
3
555
AA
2AA
55
555
20
Unlock Bypass Program
(15)
2
XX
A0
PA
PD
Unlock Bypass Erase
(15)
2
XX
80
XX
10
Unlock Bypass CFI
(13)(15)
1
XX
98
Unlock Bypass Reset
(15)
2
XXX
90
XXX
00
相关PDF资料
PDF描述
S29PL-J60BAW013 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW023 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
相关代理商/技术参数
参数描述
S29PL-J60BAW013 制造商:SPANSION 制造商全称:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 制造商:SPANSION 制造商全称:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 制造商:SPANSION 制造商全称:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 制造商:SPANSION 制造商全称:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW023 制造商:SPANSION 制造商全称:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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